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Vishay Intertechnology Electronic Components Datasheet

SUD50P04-08 Datasheet

P-Channel MOSFET

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www.vishay.com
SUD50P04-08
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-40
RDS(on) ()
0.0081 at VGS = -10 V
0.0117 at VGS = -4.5 V
ID (A)
-50 d
-48 d
Qg (TYP.)
60
TO-252
Drain connected to tab
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
S
• Power switch
• Load switch in high current
applications
• DC/DC converters
G
S
D
G
Top View
Ordering Information:
SUD50P04-08-GE3 (lead (Pb)-free and halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
L = 0.1 mH
TC = 25 °C
TA = 25 °C c
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-40
± 20
-50 d
-50 d
-100
-46
106
73.5 b
2.5
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
LIMIT
50
1.7
UNIT
°C/W
S14-2535-Rev. B, 29-Dec-14
1
Document Number: 65594
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SUD50P04-08 Datasheet

P-Channel MOSFET

No Preview Available !

www.vishay.com
SUD50P04-08
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VDS = -40 V, VGS = 0 V
VDS = -40 V, VGS = 0 V, TJ = 125 °C
VDS = -40 V, VGS = 0 V, TJ = 150 °C
VDS -10 V, VGS = -10 V
VGS = -10 V, ID = -22 A
VGS = -4.5 V, ID = -19 A
VDS = -15 V, ID = -22 A
-40
-
-
V
-1
-
-2.5
-
-
± 250
nA
-
-
-1
-
-
-50
μA
-
-
-250
-50
-
-
A
-
0.0067 0.0081
-
0.0097 0.0117
-
45
-
S
Input Capacitance
Ciss
-
5380
-
Output Capacitance
Coss
VGS = 0 V, VDS = -20 V, f = 1 MHz
-
570
-
pF
Reverse Transfer Capacitance
Crss
-
500
-
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
Qg
VDS = -20 V, VGS = -10 V, ID = -20 A
-
-
Qgs
VDS = -20 V, VGS = -4.5 V, ID = -20 A
-
Qgd
-
106
159
60
90
22
-
nC
27
-
Gate Resistance
Rg
f = 1 MHz
0.4
1.8
3.6
Turn-On Delay Time c
td(on)
-
15
23
Rise Time c
Turn-Off Delay Time c
tr
VDD = -20 V, RL = 2
-
td(off)
ID -10 A, VGEN = -10 V, Rg = 1
-
12
18
ns
70
105
Fall Time c
tf
-
18
27
Drain-Source Body Diode Ratings and Characteristics (TC = 25 °C) b
Continuous Current
IS
Pulsed Current
ISM
-
-
-50
A
-
-
-100
Forward Voltage a
VSD
IF = -10 A, VGS = 0 V
-
-0.8
-1.5
V
Reverse Recovery Time
trr
-
35
53
ns
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = -10 A, dI/dt = 100 A/μs
-
-2
-3
A
-
33
50
nC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2535-Rev. B, 29-Dec-14
2
Document Number: 65594
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Part Number SUD50P04-08
Description P-Channel MOSFET
Maker Vishay
Total Page 3 Pages
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SUD50P04-08 Datasheet PDF





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