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SUP60030E Datasheet N-Channel 80 V (D-S) MOSFET

Manufacturer: Vishay

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Overview

www.vishay.com SUP60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX.

0.0034 at VGS = 10 V 80 0.0036 at VGS = 7.5 V ID (A) d 120 120 Qg (TYP.

Key Features

  • TrenchFET® power MOSFET.
  • Maximum 175 °C junction temperature.
  • Very low Qgd reduces power loss from passing through Vplateau.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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