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Vishay Intertechnology Electronic Components Datasheet

SUP60N06-12P Datasheet

N-Channel 60-V (D-S) MOSFET

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N-Channel 60-V (D-S) MOSFET
SUP60N06-12P
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 0.012 at VGS = 10 V
ID (A)
60d
Qg (Typ.)
33
TO-220AB
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectifier
• Power Supplies
D
GD S
Top View
Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free)
SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
60
± 20
60d
54d
80
40
80
100b
3.25
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69070
S10-1475-Rev. C, 05-Jul-10
Symbol
RthJA
RthJC
Limit
40
1.25
Unit
°C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SUP60N06-12P Datasheet

N-Channel 60-V (D-S) MOSFET

No Preview Available !

SUP60N06-12P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125 °C
On-State Drain Currenta
ID(on)
VDS = 60 V, VGS = 0 V, TJ = 150 °C
VDS 10 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
RDS(on)
gfs
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125 °C
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 30 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Crss
Qg
Qgs VDS = 30 V, VGS = 10 V, ID = 20 A
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Rg
td(on)
tr
td(off)
tf
f = 1 MHz
VDD = 30 V, RL = 1.53
ID 20 A, VGEN = 10 V, Rg = 1
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
Forward Voltagea
ISM
VSD IF = 10 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 10 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
60
2.5
80
Typ.
Max.
4.5
± 250
1
50
250
0.0098
0.0155
37
0.012
0.019
Unit
V
nA
µA
A
S
1970
310
110
33 55
11
9
0.3 1.4 2.8
11 20
11 20
16 30
8 15
pF
nC
ns
0.84
40
3.2
64
60
80
1.5
80
5.0
120
A
V
ns
A
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69070
S10-1475-Rev. C, 05-Jul-10


Part Number SUP60N06-12P
Description N-Channel 60-V (D-S) MOSFET
Maker Vishay
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