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Si1037X Datasheet

P-Channel 1.8 V (G-S) MOSFET

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P-Channel 1.8 V (G-S) MOSFET
Si1037X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
0.195 at VGS = - 4.5 V
0.260 at VGS = - 2.5 V
0.350 at VGS = - 1.8 V
ID (A)
- 0.84
- 0.73
- 0.64
SC-89 (6-LEADS)
D1
D2
G3
6D
5D
4S
Top View
Marking Code
N WL
Lot Traceability
and Date Code
Part Number Code
Ordering Information: Si1037X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Threshold
• Smallest LITTLE FOOT® Package:
1.6 mm x 1.6 mm
• Low 0.6 mm Profile
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Cell Phones and Pagers
- Load Switch
• Battery Operated Systems
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 0.84
- 0.68
- 0.77
- 0.62
Pulsed Drain Current
IDM - 4
Continuous Diode Current (Diode Conduction)a
IS
- 0.18
- 0.14
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
0.21 0.17
0.13 0.10
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t5s
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board with minimum copper.
Symbol
RthJA
Typical
500
600
Maximum
600
720
Unit
°C/W
Document Number: 70686
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si1037X Datasheet

P-Channel 1.8 V (G-S) MOSFET

No Preview Available !

Si1037X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 0.77 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 0.67 A
VGS = - 1.8 V, ID = - 0.2 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 0.77 A
Diode Forward Voltagea
VSD IS = - 0.14 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 0.77 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 20
ID - 0.5 A, VGEN = - 4.5 V, RG = 6
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 0.14 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 0.45
-4
Typ.
0.160
0.212
0.290
3.1
- 0.78
3.5
0.65
0.60
10
15
30
10
20
Max.
± 100
-1
-5
0.195
0.260
0.350
- 1.2
5.5
20
30
60
20
40
Unit
V
nA
µA
A
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
4.0
VGS = 5 V thru 2.5 V
3.2
2V
4.0
3.2
2.4 2.4
TC = - 55 °C
25 °C
125 °C
1.6
0.8
0.0
0.0
1.5 V
1V
0.8 1.6 2.4 3.2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4.0
1.6
0.8
0.0
0.0
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.5
www.vishay.com
2
Document Number: 70686
S10-2544-Rev. D, 08-Nov-10


Part Number Si1037X
Description P-Channel 1.8 V (G-S) MOSFET
Maker Vishay
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