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Si2392DS Datasheet

N-Channel 100 V (D-S) MOSFET

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N-Channel 100 V (D-S) MOSFET
Si2392DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)a
0.126 at VGS = 10 V
3.1
100
0.144 at VGS = 6 V
2.9
0.189 at VGS = 4.5 V
2.6
Qg (Typ.)
2.9 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2392DS (E2)*
* Marking Code
Ordering Information:
Si2392DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters / Boost Converters
• Load Switch
• LED Backlighting in LCD TVs
• Power Management for Mobile Computing
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
75
40
Limit
100
± 20
3.1
2.5
2.2b,c
1.8b,c
8
2.1
1b, c
3
0.45
2.5
1.6
1.25b, c
0.8b, c
- 55 to 150
Maximum
100
50
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 64024
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0793-Rev. A, 15-Apr-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

Si2392DS Datasheet

N-Channel 100 V (D-S) MOSFET

No Preview Available !

Si2392DS
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS/TJ
VGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 2 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 6 V, ID = 1 A
VGS = 4.5 V, ID = 1 A
Forward Transconductancea
gfs VDS = 20 V, ID = 2 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 50 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 50 V, VGS = 10 V, ID = 2.2 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 50 V, VGS = 4.5 V, ID = 2.2 A
f = 1 MHz
VDD = 50 V, RL = 27.7
ID = 1.8 A, VGEN = 4.5 V, Rg = 1
VDD = 50 V, RL = 27.7
ID = 1.8 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 1.8 A
IF = 1.8 A, dI/dt = 100 A/µs,
TJ = 25 °C
Min.
100
1.2
5
Typ.
Max.
Unit
59
- 4.8
0.102
0.120
0.135
5
3
± 100
-1
- 10
0.126
0.144
0.189
V
mV/°C
V
nA
µA
A
S
196
67 pF
14
5.2 10.4
2.9 5.8
nC
1
1.4
0.9 4.3 8.6
40 60
68 102
14 21
20 30
ns
8 16
10 20
10 20
7 14
- 0.8
23
21
17
6
- 2.1
-8
- 1.2
35
32
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 64024
2 S13-0793-Rev. A, 15-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number Si2392DS
Description N-Channel 100 V (D-S) MOSFET
Maker Vishay
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