The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
N-Channel 30-V (D-S) MOSFET
Si3456BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.035 at VGS = 10 V 0.052 at VGS = 4.5 V
ID (A) 6.0 4.9
FEATURES
• Halogen free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6 Top View
16
25
34
2.85 mm
Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free)
Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
6Bxxx
(1, 2, 5, 6) D
(3) G (4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
6.0 4.5 4.8 3.
Si3456BDV Datasheet
