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Si3459BDV Datasheet

P-Channel 60-V (D-S) MOSFET

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New Product
P-Channel 60-V (D-S) MOSFET
Si3459BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.216 at VGS = - 10 V
- 60
0.288 at VGS = - 4.5 V
ID (A)d
- 2.9
- 2.5
Qg (Typ.)
4.4 nC
TSOP-6
Top View
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
S
D1
6D
3 mm D
G
25
34
2.85 mm
D
S
Marking Code
AS XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3459BDV-T1-E3 (Lead (Pb)-free)
Si3459BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
- 60
± 20
- 2.9
- 2.3
- 2.2a, b
- 1.8a, b
-8
- 2.9
- 1.7a, b
3.3
2.1
2a, b
1.3a, b
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Typical
53
32
Maximum
62.5
38
Unit
°C/W
Document Number: 69954
S09-0765-Rev. B, 04-May-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si3459BDV Datasheet

P-Channel 60-V (D-S) MOSFET

No Preview Available !

Si3459BDV
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = - 250 µA
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = - 60 V, VGS = 0 V
VDS = - 60 V, VGS = 0 V, TJ = 70 °C
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = - 10 V, ID = - 2.2 A
VGS = - 4.5 V, ID = - 1.9 A
VDS = - 15 V, ID = - 2.2 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 30 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 30 V, VGS = - 10 V, ID = - 2.2 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 30 V, VGS = - 4.5 V, ID = - 2.2 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 30 V, RL = 16.7 Ω
ID - 1.8 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 30 V, RL = 16.7 Ω
ID - 1.8 A, VGEN = - 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 1.8 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 1.8 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
- 60
-1
-8
2
Typ. Max. Unit
- 65
4
0.180
0.240
4
V
mV/°C
-3
± 100
-1
- 10
0.216
0.288
V
nA
µA
A
Ω
S
350
40
30
7.7
4.4
1.3
2.5
10
45
60
16
13
5
12
18
10
- 0.8
28
35
23
5
12
6.6
20
68
90
25
20
10
20
30
15
- 2.9
-8
- 1.2
56
70
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69954
S09-0765-Rev. B, 04-May-09


Part Number Si3459BDV
Description P-Channel 60-V (D-S) MOSFET
Maker Vishay
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