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Vishay Intertechnology Electronic Components Datasheet

Si4101DY Datasheet

P-Channel 30 V (D-S) MOSFET

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New Product
P-Channel 30 V (D-S) MOSFET
Si4101DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
- 30 0.0060 at VGS = - 10 V
0.0080 at VGS = - 4.5 V
SO-8
ID (A)d
- 25.7
- 22.3
Qg (Typ.)
65 nC
S1
S2
S3
G4
8D
7D
6D
5D
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Adaptor Switch, Load Switch
• Power Management
• Notebook Computers and
Portable Battery Packs
G
S
Top View
Ordering Information:
Si4101DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 30
± 20
- 25.7
- 20.6
- 18a, b
- 14.4a, b
- 70
-5
- 2.4a, b
- 30
45
6
3.8
2.9a, b
1.9a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 84 °C/W.
d. Based on TC = 25 °C.
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
36
16
Maximum
43
21
Unit
°C/W
Document Number: 62828
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0110-Rev. A, 21-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

Si4101DY Datasheet

P-Channel 30 V (D-S) MOSFET

No Preview Available !

Si4101DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 15 A
VGS = - 4.5 V, ID = - 10 A
VDS = - 10 V, ID = - 15 A
Ciss
Coss
Crss
Qg
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 18 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = - 15 V, VGS = - 4.5 V, ID = - 18 A
f = 1 MHz
VDD = - 15 V, RL = 1.5
ID - 10 A, VGEN = - 10 V, Rg = 1
VDD = - 15 V, RL = 1.5
ID - 10 A, VGEN = - 4.5 V, Rg = 1
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 3 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
-1
- 30
0.4
Typ.
- 20
5.3
0.0050
0.0066
72
8190
772
715
135
65
22.5
17.6
2
20
9
80
11
72
60
60
23
- 0.78
29
19
13
16
Max.
- 2.5
± 100
-1
-5
0.0060
0.0080
203
85
4
30
18
120
20
108
90
90
35
-5
- 70
- 1.2
45
29
Unit
V
mV/°C
V
nA
µA
A
S
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62828
2 S13-0110-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number Si4101DY
Description P-Channel 30 V (D-S) MOSFET
Maker Vishay
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