Si4155DY
Si4155DY is P-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Notebook puters and mobile puting
- Adaptor switch / load switch
- Battery management
- Power management
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
SO-8 Si4155DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs) Continuous source-drain diode current Avalanche current Single-pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. TC = 25 °C
LIMIT -30 ± 25 -13.6 -10.9
-10.2 a,b -8.2 a,b
-50 3.7 -2.1 a,b -14 9.8 4.5 2.9 2.5 a,b 1.6 a,b -50 to 150
UNIT V
A m J W °C
S22-0013-Rev. A,...
