Si4155DY Overview
(Ω) at VGS = -10 V RDS(on) max. (Ω) at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration -30 0.0150 0.0260 16 -13.6 c Single.
Si4155DY Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization
Datasheet Details
| Part number | Si4155DY |
|---|---|
| Datasheet | Si4155DY-Vishay.pdf |
| File Size | 202.31 KB |
| Manufacturer | Vishay |
| Description | P-Channel MOSFET |
|
|