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Vishay Intertechnology Electronic Components Datasheet

Si4322DY Datasheet

N-Channel 30-V (D-S) MOSFET

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Si4322DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0085 at VGS = 10 V
0.0125 at VGS = 4.5 V
ID (A)a
18
15
Qg (Typ.)
11.7 nC
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.4 at 2 A
IS (A)
5a
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4322DY-T1-E3 (Lead (Pb)-free)
Si4322DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
• Synchronous Buck-Low Side
- Notebook
- Server
- Workstation
Synchronous Rectifier-POL
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
18
15
14b, c
11b, c
50
5
2.8b, c
5.4
3.4
3.1b, c
2.0b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typ.
34
17
Max.
40
23
Unit
°C/W
Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4322DY Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4322DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID= 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On -State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 12 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 15 A
Gate-Source Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 15 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 4.5 V, RG = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 10 V, RG = 1 Ω
Fall Time
tf
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 2 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
30
1.5
30
Typ.
Max.
3.0
± 100
0.18 1
22 100
0.007
0.0095
56
0.0085
0.012
1640
380
118
25.5
11.7
5.1
3.6
2.3
24
84
36
17
12
36
36
7
0.35
26
16
12.5
13.5
38
17.5
3.5
36
126
54
26
18
54
54
11
5
50
0.4
40
25
Unit
V
V
nA
mA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73860
S09-0226-Rev. B, 09-Feb-09


Part Number Si4322DY
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay
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