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Si4447ADY Datasheet

P-Channel 40 V (D-S) MOSFET

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New Product
P-Channel 40 V (D-S) MOSFET
Si4447ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 40
RDS(on) ()
0.045 at VGS = - 10 V
0.062 at VGS = - 4.5 V
ID (A)d
- 7.2
- 6.1
Qg (Typ.)
11.8 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches, Adaptor Switch
- Notebook PCs
S
G
Top View
Ordering Information: Si4447ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
- 40
± 20
- 7.2
- 5.7
- 5.5a, b
- 4.4a, b
- 20
- 3.5
- 2.1a, b
- 10
5
4.2
2.7
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on TC = 25 °C.
t 10 s
Steady State
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
Symbol
RthJA
RthJF
Typical
40
24
Maximum
50
30
Unit
°C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4447ADY Datasheet

P-Channel 40 V (D-S) MOSFET

No Preview Available !

Si4447ADY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 5 A
VGS = - 4.5 V, ID = - 4 A
VDS = - 10 V, ID = - 5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = - 20 V, VGS = 0 V, f = 1 MHz
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
f = 1 MHz
VDD = - 20 V, RL = 4
ID - 5 A, VGEN = - 10 V, Rg = 1
VDD = - 20 V, RL = 4
ID - 5 A, VGEN = - 4.5 V, Rg = 1
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 2 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 40
- 1.2
- 10
1.0
Typ.
- 42
4.6
0.036
0.050
14
970
120
95
25
11.8
3
5.2
5.5
7
12
30
9
44
33
28
13
- 0.76
27
19
14
13
Max.
Unit
- 2.5
± 100
-1
-5
0.045
0.062
V
mV/°C
V
nA
µA
A
S
pF
38
18
nC
11
14
24
60
18
80
60
55
25
- 3.5
- 20
- 1.2
50
35
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10


Part Number Si4447ADY
Description P-Channel 40 V (D-S) MOSFET
Maker Vishay
Total Page 9 Pages
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