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Vishay Intertechnology Electronic Components Datasheet

Si4455DY Datasheet

P-Channel 150-V (D-S) MOSFET

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Si4455DY pdf
P-Channel 150-V (D-S) MOSFET
Si4455DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 150
0.295 at VGS = - 10 V
0.315 at VGS = - 6 V
SO-8
ID (A)
- 8.9c
- 8.6c
Qg (Typ.)
23.2 nC
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information:
Si4455DY-T1-E3 (Lead (Pb)-free)
Si4455DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100% Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
Active Clamp in Intermediate DC/
DC Power Supplies
S
• H-Bridge High Side Switch for
Lighting Application
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Based on TC = 25 °C.
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 80 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
33
17
Limit
- 150
± 20
- 2.8
- 2.3
- 2a, b
- 1.6a, b
- 15
- 4.9
- 2.5a, b
- 15
11.25
5.9
3.8
3.1a, b
2a, b
- 55 to 150
Maximum
40
21
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 68631
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-1371-Rev. C, 24-Jun-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

Si4455DY Datasheet

P-Channel 150-V (D-S) MOSFET

No Preview Available !

Si4455DY pdf
Si4455DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 150 V, VGS = 0 V
VDS = - 150 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 4 A
VGS = - 6 V, ID = - 3 A
VDS = - 15 V, ID = 4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = - 50 V, VGS = 0 V, f = 1 MHz
VDS = - 75 V, VGS = - 10 V, ID = - 3 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ta
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 75 V, VGS = - 6 V, ID = - 3 A
f = 1 MHz
VDD = - 75 V, RL = 25
ID - 3 A, VGEN = - 6 V, Rg = 1
VDD = - 75 V, RL = 25
ID - 3 A, VGEN = - 10 V, Rg = 1
TC = 25 °C
IS = - 3 A
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 150
-2
-8
Typ.
- 165
- 6.6
0.245
0.260
12
1190
61
42
27.5
23.2
5.4
8.4
6.1
20
95
38
34
11
28
52
35
- 0.8
65
180
45
20
Max.
Unit
-4
± 100
-1
- 10
0.295
0.315
V
mV/°C
V
nA
µA
A
S
pF
42
35
nC
9.2
30
145
60
51
18
42
78
53
- 13
- 15
- 1.2
90
270
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 68631
2 S13-1371-Rev. C, 24-Jun-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number Si4455DY
Description P-Channel 150-V (D-S) MOSFET
Maker Vishay
Total Page 9 Pages
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