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Vishay Intertechnology Electronic Components Datasheet

Si4542DY Datasheet

N- and P-Channel 30-V (D-S) MOSFET

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Si4542DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.025 at VGS = 10 V
0.035 at VGS = 4.5 V
P-Channel
- 30
0.032 at VGS = - 10 V
0.045 at VGS = - 4.5 V
ID (A)
6.9
5.8
- 6.1
- 5.1
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
Ordering Information: Si4542DY-T1-E3 (Lead (Pb)-free)
Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 30 - 30
Gate-Source Voltage
VGS ± 20 ± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
6.9 - 6.1
5.5 - 4.9
Pulsed Drain Current
IDM 40 - 40
Continuous Source Current (Diode Conduction)a
IS 1.7 - 1.7
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t 10 s.
Symbol
RthJA
N- or P-Channel
62.5
Unit
°C/W
Document Number: 70666
S09-0868-Rev. G, 18-May-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4542DY Datasheet

N- and P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4542DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VDS - 5 V, VGS = - 10 V
VGS = 10 V, ID = 6.9 A
VGS = - 10 V, ID = - 6.1 A
VGS = 4.5 V, ID = 5.8 A
VGS = - 4.5 V, ID = - 5.1 A
VDS = 15 V, ID = 6.9 A
VDS = - 15 V, ID = - 6.1 A
IS = 1.7 A, VGS = 0 V
IS = - 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 15 V, VGS = 10 V, ID = 6.9 A
Qgs
P-Channel
Qgd VDS = - 15 V, VGS = - 10 V, ID = - 6.1 A
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Reverse Recovery Time
td(on)
tr
td(off)
tf
trr
Qrr
N-Channel
VDD = 15 V, RL = 10 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
P-Channel
VDD = - 15 V, RL = 10 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
IF = 1.7 A, dI/dt = 100 A/µs
IF = - 1.7 A, dI/dt = 100 A/µs
IF = 1.7 A, dI/dt = 100 A/µs
IF = - 1.7 A, dI/dt = 100 A/µs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
1.0
- 1.0
20
- 20
0.5
2
Typ. Max. Unit
0.020
0.026
0.026
0.036
25
16
± 100
± 100
1
-1
25
- 25
0.025
0.032
0.035
0.045
1.2
- 1.2
V
nA
µA
A
Ω
S
V
30 50
32 50
7.5
nC
7.0
3.5
5.0
2 3.4
Ω
4 6.8
12 20
10 20
10 20
10 20
60 90
55 80 ns
15 30
25 40
50 90
50 90
45
nC
55
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70666
S09-0868-Rev. G, 18-May-09


Part Number Si4542DY
Description N- and P-Channel 30-V (D-S) MOSFET
Maker Vishay
Total Page 7 Pages
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