Full PDF Text Transcription for Si4688DY (Reference)
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Si4688DY. For precise diagrams, and layout, please refer to the original PDF.
New Product N-Channel 30-V (D-S) MOSFET Si4688DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.011 at VGS = 10 V 0.0145 at VGS = 4.5 V ID (A) 12 9.8 S1 S2 S3 ...
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) 30 0.011 at VGS = 10 V 0.0145 at VGS = 4.5 V ID (A) 12 9.8 S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4688DY-T1-E3 (Lead (Pb)-free) Si4688DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Notebook PC - Core - System Power D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 12 8.9 9.5 7.
Si4688DY Datasheet
