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Vishay Intertechnology Electronic Components Datasheet

Si4730EY Datasheet

Current Sensing MOSFET

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Si4730EY
Vishay Siliconix
Current Sensing MOSFET, N-Channel 30-V (D-S)
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.015 @ VGS = 10 V
0.020 @ VGS = 4.5 V
ID (A)
11.7
10.1
SENSE
KELVIN
S
G
1
2
3
4
SO-8
Top View
8D
7D
6D
5D
D
G
SENSE
KELVIN
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
11.7
9.8
40
3.3
3.6
2.5
–55 to 175
8.0
6.7
1.6
1.7
1.2
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71177
S-00823—Rev. A, 01-May-00
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
35
77
18
Maximum
42
90
22
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1


Vishay Intertechnology Electronic Components Datasheet

Si4730EY Datasheet

Current Sensing MOSFET

No Preview Available !

Si4730EY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 11.7 A
VGS = 4.5 V, ID = 10.1 A
VDS = 15 V, ID = 11.7 A
IS = 3.3 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Current Sense Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 10 V, ID = 11.7 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 3.3 A, di/dt = 100 A/ms
Current Sensing Ratio
Mirror Active Resistance
r
rm(on)
ID = 1 A, VGSS = 10 V, RSENSE = 2.2 W
VGS = 10 V, ID = 10 mA
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
1.0 V
"100
nA
1
mA
25
40 A
0.0125
0.015
35
0.75
0.015
0.020
1.1
W
S
V
34 50
7 nC
5.6
13 26
10 20
60 120 ns
20 40
30 60
360 450 540
3.5 W
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
VGS = 10 thru 4 V
32
40
32
Transfer Characteristics
24 24
16
8
0
0
3V
2V
0.5 1.0 1.5 2.0 2.5
VDS – Drain-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2
3.0
16
8
0
0
TC = 125_C
25_C
–55_C
123
VGS – Gate-to-Source Voltage (V)
4
Document Number: 71177
S-00823—Rev. A, 01-May-00


Part Number Si4730EY
Description Current Sensing MOSFET
Maker Vishay
Total Page 6 Pages
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