Si4826DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 5.4 A
VGS = 4.5 V, ID = 8.2 A
VDS = 15 V, ID = 6.3 A
VDS = 15 V, ID = 9.5 A
IS = 1.3 A, VGS = 0 V
IS = 2.2 A, VGS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
1.0
20
30
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Channel-1
VDS = 15 V, VGS = 5 V, ID = 6.3 A
Channel-2
VDS = 15 V, VGS = 5 V, ID = - 9.5 A
Channel-1
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Channel-2
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.3 A, di/dt = 100 A/ms
IF = 2.2 A, di/dt = 100 mA/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1.5
0.5
Typ Max Unit
100
100
1
1
15
15
0.018
0.0125
0.024
0.0165
17
28
0.7
0.75
0.022
0.0155
0.030
0.0205
1.1
1.1
V
nA
mA
A
W
S
V
8.0 12
15 23
1.75
5.3
nC
3.2
4.6
5.1
W
2.6
10 20
15 30
5 10
5 10
26 50
ns
44 80
8 16
12 24
30 60
32 70
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Document Number: 71137
S-31726—Rev. B, 18-Aug-03
