900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

Si4835DDY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

New Product
P-Channel 30-V (D-S) MOSFET
Si4835DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.018 at VGS = - 10 V
0.030 at VGS = - 4.5 V
ID (A)d
- 13
- 10
Qg (Typ.)
22 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
S
G
Top View
Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free)
Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 30
± 25
- 13
- 10.5
- 8.7a, b
- 7.7a, b
- 50
- 4.6
2.0a, b
- 20
20
5.6
3.6
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
t 10 s
Steady State
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4835DDY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4835DDY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 25 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 10 A
VGS = - 4.5 V, ID = - 7 A
VDS = - 10 V, ID = - 10 A
Ciss
Coss
Crss
Qg
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
f = 1 MHz
VDD = - 15 V, RL = 3 Ω
ID - 5 A, VGEN = - 10 V, Rg = 1 Ω
VDD = - 15 V, RL = 3 Ω
ID - 5 A, VGEN = - 4.5 V, Rg = 1 Ω
TC = 25 °C
IS = - 2 A, VGS = 0 V
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 30
- 1.0
- 30
0.3
Typ.
Max.
Unit
- 31
5.5
0.014
0.0245
23
- 3.0
± 100
-1
-5
0.018
0.030
V
mV/°C
V
nA
µA
A
Ω
S
1960
380
325
43
22
6
11
1.3
11
13
32
9
44
100
28
15
65
33
2.5
22
25
50
18
70
160
50
30
pF
nC
Ω
ns
- 0.75
28
20
13
15
- 4.6
- 50
- 1.2
45
40
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09


Part Number Si4835DDY
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay
Total Page 10 Pages
PDF Download

Si4835DDY Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 Si4835DDY P-Channel 30-V (D-S) MOSFET
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy