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Vishay Intertechnology Electronic Components Datasheet

Si4845DY Datasheet

P-Channel 20-V (D-S) MOSFET

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Si4845DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.210 at VGS = - 4.5 V
0.345 at VGS = - 2.5 V
ID (A)a
- 2.7
- 2.1
Qg (Typ.)
2.9
SCHOTTKY PRODUCT SUMMARY
VKA (V)
VF (V)
Diode Forward Voltage
20 0.50 V at 1.0 A
IF (A)
2.4
SO-8
A1
A2
S3
G4
8K
7K
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Integrated Schottky
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Asynchronous dc-to-dc Buck
SK
G
Top View
Ordering Information:Si4845DY-T1-E3 (Lead (Pb)-free)
Si4845DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Foward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 20
- 20
± 12
- 2.7
- 2.1
- 2.1b, c
- 1.7b, c
-7
- 2.4
- 1.9b, c
1b
-7
2.75
1.75
1.75b, c
1.1b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73415
S09-2109-Rev. C, 12-Oct-09
Symbol
RthJA
RthJF
Typ.
60
35
Max.
71.5
45
Unit
°C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4845DY Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

Si4845DY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 75 °C
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 2 A
VGS = - 2.5 V, ID = - 1.0 A
VDS = - 15 V, ID = - 2 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 4.5 V, ID = - 4 A
f = 1 MHz
VDD = - 10 V, RL = 2.5 Ω
ID - 4 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 10 V, RL = 2.5 Ω
ID - 4 A, VGEN = - 10 V, Rg = 1 Ω
Continuous Source-Drain Diode
Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 1.9 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.5
-5
Typ.
- 25
2.6
0.175
0.285
3.5
312
63
33
2.9
0.72
0.65
5.5
8
40
17
11
3
10
12
8
- 0.85
24
14
14
10
Max.
- 1.5
± 100
-1
- 10
0.210
0.345
4.5
13
60
26
18
6
16
20
15
- 2.7
-7
- 1.2
40
20
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 1 A
IF = 1 A, TJ = 125 °C
VR = 30 V
VR = 30 V, TJ = 75 °C
VR = 30 V, TJ = 125 °C
VR = 10 V
Min.
Typ.
0.45
0.36
0.04
0.1
2
62
Max.
0.50
0.42
0.1
2
10
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73415
S09-2109-Rev. C, 12-Oct-09


Part Number Si4845DY
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay
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