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Si5411EDU - P-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • Thermally Enhanced PowerPAK® ChipFET Package - Small Footprint Area - Low On-Resistance.
  • 100 % Rg and UIS Tested.
  • Typical ESD Protection: 5000 V (HBM).
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 1 2 D3 DD 4 8D 7D 6S 5 D G S 1.9 mm.

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Datasheet Details

Part number Si5411EDU
Manufacturer Vishay
File Size 168.05 KB
Description P-Channel MOSFET
Datasheet download datasheet Si5411EDU Datasheet

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www.vishay.com Si5411EDU Vishay Siliconix P-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) 0.0082 at VGS = - 4.5 V 0.0094 at VGS = - 3.7 V 0.0117 at VGS = - 2.5 V 0.0206 at VGS = - 1.8 V ID (A) - 25a - 25a - 25a - 15 PowerPAK ChipFET Single Qg (Typ.) 43 nC FEATURES • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® ChipFET Package - Small Footprint Area - Low On-Resistance • 100 % Rg and UIS Tested • Typical ESD Protection: 5000 V (HBM) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 2 D3 DD 4 8D 7D 6S 5 D G S 1.
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