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Vishay Intertechnology Electronic Components Datasheet

Si5997DU Datasheet

Dual P-Channel 30 V (D-S) MOSFET

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Dual P-Channel 30 V (D-S) MOSFET
Si5997DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.054 at VGS = - 10 V
- 30
0.088 at VGS = - 4.5 V
ID (A)
- 6a
- 6a
Qg (Typ.)
4.8 nC
PowerPAK ChipFET Dual
1
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
S1 2
D1 G1
8 D1
7
D2
6 D2
5
3
S2 4
G2
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
S1
Marking Code
DF XXX
Lot Traceability
and Date Code
G1
G2
S2
Bottom View
Part #
Code
Ordering Information: Si5997DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
- 30
± 20
- 6a
- 6a
- 5.1b, c
- 4.1b, c
- 25
- 6a
- 1.9b, c
10.4
6.7
2.3b, c
1.5b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
43
9.5
55
°C/W
12
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si5997DU Datasheet

Dual P-Channel 30 V (D-S) MOSFET

No Preview Available !

Si5997DU
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 3 A
VGS = - 4.5 V, ID = - 1 A
VDS = - 15 V, ID = - 3 A
Ciss
Coss
Crss
Qg
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 5.1 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 5.1 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
VDD = - 15 V, RL = 3.7
ID - 4.1 A, VGEN = - 4.5 V, Rg = 1
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
VDD = - 15 V, RL = 3.7
ID - 4.1 A, VGEN = - 10 V, Rg = 1
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
Body Diode Reverse Recovery Time
VSD
trr
IS = - 4.1 A, VGS = 0 V
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
- 1.2
- 20
2
Typ.
Max.
Unit
- 22
4.1
0.045
0.072
7
- 2.4
± 100
-1
- 10
0.054
0.088
V
mV/°C
V
nA
µA
A
S
430
90 pF
70
9.5 14.5
4.8 7.5
nC
1.6
2.2
8 16
35 70
25 50
17 35
10 20
ns
10 20
10 20
20 40
10 20
- 0.85
15
8
10.5
4.5
-6
- 25
- 1.2
30
15
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10


Part Number Si5997DU
Description Dual P-Channel 30 V (D-S) MOSFET
Maker Vishay
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