Si7850DP Datasheet | Vishay

FEATURES - Trench FET® power MOSFETs - New low thermal resistance Power PAK® package with low 1.07 mm profile - PWM optimized for fast switching - 100 % Rg tested Available - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Primary side switch for 24 V DC/DC applications - Secondary synchronous rectifier PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (n C) ID (A) Configuration 60 0.022 0.031 18 10.3 Single N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free Power PAK SO-8 Si7850DP-T1-E3 Si7850DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 10 s STEADY STATE Drain-source voltage Gate-source voltage ± 20 ± 20 Continuous drain current (TJ = 150 °C) a TA = 25 °C TA = 85 °C Continuous source current Pulsed drain current Avalanche current b Single avalanche energy b Maximum power dissipation a TA = 25 °C TA = 85 °C Operating junction and storage temperature range PD TJ,...