Si7858BDP Description
New Product Si7858BDP Vishay Siliconix N-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.0025 at VGS = 4.5 V 0.0030 at VGS = 2.5 V 0.0037 at VGS = 1.8 V ID (A)a 40 40 40 56 nC Qg.
Si7858BDP Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to RoHS Directive 2002/95/EC