SiC769CD Key Features
- Integrated Gen III MOSFETs and DrMOS pliant gate driver IC
- Enables Vcore switching at 1 MHz
- Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions
- Low ringing on the VSWH pin reduces EMI
- Pin patible with DrMOS 6 x 6 version 3.0
- Tri-state PWM input function prevents negative output voltage swing
- 5 V logic levels on PWM
- MOSFET threshold voltage optimized for 5 V driver bias supply
- Automatic skip mode operation (SMOD) for light load efficiency
- Under-voltage lockout