* TrenchFET® Gen IV power MOSFET
* 45 V Drain-source break-down voltage
* Tuned for low Qg and Qoss
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D
* Synchronous r
SiDR608EP Datasheet (220.17 KB)
SiDR608EP
220.17 KB
N-channel mosfet.
www.vishay.com SiDR608EP Vishay Siliconix N-Channel 45 V (D-S) 175 °C MOSFET PowerPAK® SO-8DC D D D 6 D 7 8 5 S 6.15 mm 1 5.15 mm Top Vie.
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