SiDR608EP mosfet equivalent, n-channel mosfet.
* TrenchFET® Gen IV power MOSFET
* 45 V Drain-source break-down voltage
* Tuned for low Qg and Qoss
* 100 % Rg and UIS tested
* Material categorizatio.
D
* Synchronous rectification
* High power density DC/DC
* Motor drive control
G
S N-Channel MOSFET
O.
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