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Vishay Intertechnology Electronic Components Datasheet

SiHA11N80E Datasheet

Power MOSFET

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www.vishay.com
SiHA11N80E
Vishay Siliconix
E Series Power MOSFET
D
Thin-Lead TO-220 FULLPAK
G
G DS
S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. (Ω) at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
850
VGS = 10 V
88
0.38
9
16
Single
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Thin-lead TO-220 FULLPAK
SiHA11N80E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) a
Pulsed drain current b
Linear derating factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single pulse avalanche energy c
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dv/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dv/dt
Soldering recommendations (peak temperature) e
For 10 s
Mounting torque
M3 screw
Notes
a. Limited by maximum junction temperature
b. Repetitive rating; pulse width limited by maximum junction temperature
c. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
e. 1.6 mm from case
LIMIT
800
± 30
12
8
32
0.27
226
34
-55 to +150
70
4.3
300
0.6
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Nm
S17-1187-Rev. A, 31-Jul-17
1
Document Number: 92006
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHA11N80E Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
SiHA11N80E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-case (drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage (N)
VDS
ΔVDS/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VGS = ± 30 V
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.5 A
VDS = 30 V, ID = 5.5 A
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related a
Effective output capacitance, time
related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate input resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V ID = 5.5 A, VDS = 480 V
VDD = 480 V, ID = 5.5 A,
VGS = 10 V, Rg = 9.1 Ω
f = 1 MHz, open drain
MIN. TYP.
800
-
-
1.1
2
-
-
-
-
-
-
-
-
-
-
0.38
-
4.5
-
1670
-
68
-
9
-
43
-
212
-
44
-
9
-
16
-
18
-
15
-
55
-
18
0.4 0.9
Continuous source-drain diode current
Pulsed diode forward current
IS
MOSFET symbol
showing the
D
-
-
integral reverse
G
ISM
p - n junction diode
-
-
S
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 5.5 A, VGS = 0 V
TJ = 25 °C, IF = IS = 5.5 A,
di/dt = 100 A/μs, VR = 25 V
-
-
-
345
-
4.2
-
21
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
MAX.
-
-
4
± 100
±1
1
10
0.44
-
-
-
-
-
-
88
-
-
36
30
110
36
1.8
12
32
1.2
690
8.4
-
UNIT
V
V/°C
V
nA
μA
μA
Ω
S
pF
nC
ns
Ω
A
V
ns
μC
A
S17-1187-Rev. A, 31-Jul-17
2
Document Number: 92006
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Part Number SiHA11N80E
Description Power MOSFET
Maker Vishay
Total Page 3 Pages
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