SiHA20N50E Datasheet | Vishay

FEATURES - Low figure-of-merit (FOM) Ron x Qg - Low input capacitance (Ciss) - Reduced switching and conduction losses - Low gate charge (Qg) - Avalanche energy rated (UIS) Available - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - puting - PC silver box / ATX power supplies - Lighting - Two stage LED lighting - Consumer electronics - Applications using hard switched topologies - Power factor correction (PFC) - Two switch forward converter - Flyback converter - Switch mode power supplies (SMPS) ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free Thin-Lead TO-220 FULLPAK Si HA20N50E-E3 Si HA20N50E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) e Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode d V/dt d VDS = 0 V to 80 % VDS EAS PD TJ, Tstg d V/dt Soldering remendations (peak temperature) c for 10 s Mounting torque M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 m H, Rg = 25 , IAS = 3.8 A c. 1.6 mm from case d. ISD  ID, d I/dt = 100 A/μs, starting TJ = 25 °C e. Limited by maximum junction...