* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Low switching losses due to reduced Qrr
* Ultra low gate charge (Qg)
* Avalanche energy r
SiHA21N65EF Datasheet (156.42 KB)
SiHA21N65EF
156.42 KB
Power mosfet.
www.vishay.com SiHA21N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PR.
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