SiHB065N60E - Power MOSFET

Features

4th generation E series technology.
Low figure-of-merit (FOM) Ron x Qg.
Low effective capacitance (Co(er)).
Reduced switching and conduction losses.
Avalanche energy rated (UIS).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiHB065N60E
Manufacturer	Vishay
File Size	186.77 KB
Description	Power MOSFET
Datasheet	SiHB065N60E Datasheet
Additional preview pages of the SiHB065N60E datasheet.

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Full PDF Text Transcription

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www.vishay.com SiHB065N60E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) D G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 74 19 15 Single 0.057 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.

Published: Apr 27, 2020 |