SiHD1K4N60E Description
SiHD1K4N60E Vishay Siliconix E Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 7.5 1 3 Single 1.3.
SiHD1K4N60E Key Features
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912