SiHD2N80AE Overview
SiHD2N80AE Vishay Siliconix E Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 10.5 3 2 Single 2.5.
SiHD2N80AE Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Integrated Zener diode ESD protection
- Material categorization: for definitions of pliance