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SiHD2N80AE - Power MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low effective capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Integrated Zener diode ESD protection.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SiHD2N80AE Vishay Siliconix E Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 10.5 3 2 Single 2.5 FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Integrated Zener diode ESD protection • Material categorization: for definitions of compliance please see www.vishay.