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Vishay Intertechnology Electronic Components Datasheet

SiHD7N60E-GE3 Datasheet

E Series Power MOSFET

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www.vishay.com
SiHD7N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
40
5
9
Single
0.6
DPAK
(TO-252)
D
GS
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• Low Figure-of-Merit (FOM) Ron x Qg
• Low Input Capacitance (Ciss)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
DPAK (TO-252)
SiHD7N60E-GE3
SiHD7N60ET1-GE3
SiHD7N60ET5-GE3
SiHD7N60ET4-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Drain-Source Voltage
TC = - 25 °C, ID = 250 μA
VDS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
dV/dt
Soldering Recommendations (Peak Temperature)c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 13.8 mH, Rg = 25 , IAS = 2.5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
575
± 20
30
7
5
18
0.63
43
78
- 55 to + 150
37
3
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S13-1419-Rev. C, 01-Jul-13
1
Document Number: 91510
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHD7N60E-GE3 Datasheet

E Series Power MOSFET

No Preview Available !

www.vishay.com
SiHD7N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
1.6
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Relateda
Effective Output Capacitance, Time
Relatedb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.5 A
VDS = 50 V, ID = 3.5 A
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VGS = 10 V ID = 3.5 A, VDS = 480 V
VDD = 480 V, ID = 3.5 A,
VGS = 10 V, Rg = 9.1
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
integral reverse
G
Pulsed Diode Forward Current
ISM p - n junction diode
S
MIN.
609
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.68 - V/°C
- 4V
- ± 100 nA
-1
μA
- 10
0.5 0.6
1.9 -
S
680 -
39 -
5-
pF
34 -
100 -
20 40
5 - nC
9-
13 26
13 26
ns
24 48
14 28
1.1 -
-7
A
- 18
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 3.5 A, VGS = 0 V
- - 1.2 V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 3.5 A,
dI/dt = 100 A/μs, VR = 20 V
- 230 - ns
- 1.9 - μC
- 14 - A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S13-1419-Rev. C, 01-Jul-13
2
Document Number: 91510
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHD7N60E-GE3
Description E Series Power MOSFET
Maker Vishay
Total Page 9 Pages
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