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SiHF18N50C - Power MOSFET

Key Features

  • Low Figure-of-Merit Ron x Qg.
  • 100 % Avalanche Tested.
  • High Peak Current Capability.
  • dV/dt Ruggedness.
  • Improved trr/Qrr.
  • Improved Gate Charge.
  • High Power Dissipations Capability.
  • Compliant to RoHS Directive 2002/95/EC G S D G GDS.

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Full PDF Text Transcription (Reference)

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SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 76 21 29 Single TO-220 TO-220 FULLPAK 0.