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www.vishay.com
SiHF22N65E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
110 15 32 Single
0.18
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
Available
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS) • Material categorization: for definitions of
Available
compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.