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Vishay Intertechnology Electronic Components Datasheet

SiHF730S Datasheet

Power MOSFET

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Power MOSFET
IRF730S, SiHF730S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
38
5.7
22
Single
1.0
D
D2PAK (TO-263)
K
G
DS
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF730S-GE3
IRF730SPbF
SiHF730S-E3
SiHF730S-E3
D2PAK (TO-263)
SiHF730STRL-GE3a
IRF730STRLPbFa
SiHF730STL-E3a
SiHF730STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
SYMBOL
VDS
VGS
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 5.5 A (see fig. 12).
c. ISD 5.5 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
D2PAK (TO-263)
SiHF730STRR-GE3a
-
-
-
LIMIT
400
± 20
5.5
3.5
22
0.59
0.025
290
5.5
7.4
74
3.1
4.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91048
S11-1048-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHF730S Datasheet

Power MOSFET

No Preview Available !

IRF730S, SiHF730S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.3 Ab
VDS = 50 V, ID = 3.3 Ab
400 -
-V
- 0.54 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.0
2.9 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.5 A, VDS = 320 V,
see fig. 6 and 13b
VDD = 200 V, ID = 3.5 A,
Rg = 12 , RD = 57 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
700 -
170 - pF
64 -
- 38
- 5.7 nC
- 22
10 -
15 -
ns
38 -
14 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 5.5
A
- - 22
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 270 530 ns
TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μsb
Qrr - 1.8 2.2 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91048
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHF730S
Description Power MOSFET
Maker Vishay
Total Page 9 Pages
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