Qg (Max.) (nC)
VGS = 10 V
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs ofter the designer a new standard in power
transistors for switching applications.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
6-32 or M3 screw
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
- 55 to + 150
lbf · in
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000