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Vishay Intertechnology Electronic Components Datasheet

SiHF830S Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
IRF830S, SiHF830S, IRF830L, SiHF830L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
38
5.0
22
Single
I2PAK (TO-262)
D2PAK (TO-263)
1.5
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Fast switching
• Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF830S-GE3
IRF830SPbF
D2PAK (TO-263)
SiHF830STRL-GE3 a
IRF830STRLPbF a
I2PAK (TO-262)
SiHF830L-GE3
IRF830LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
c. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).
d. ISD 4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.
e. 1.6 mm from case.
f. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
500
± 20
4.5
2.9
18
0.59
0.025
280
4.5
7.4
74
3.1
3.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 91064
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHF830S Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
IRF830S, SiHF830S, IRF830L, SiHF830L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.7 Ab
VDS = 50 V, ID = 2.7 Ab
500 -
-V
- 0.61 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.5
2.5 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.1 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 3.1 A,
Rg = 12 , RD = 79 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
610 -
160 - pF
68 -
- 38
- 5.0 nC
- 22
8.2 -
16 -
ns
42 -
16 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 4.5
A
- - 18
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
- 320 640 ns
TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μsb
-
1.0 2.0 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S15-1659-Rev. D, 20-Jul-15
2
Document Number: 91064
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHF830S
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
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