900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SiHFPS38N60L Datasheet

Power MOSFET

No Preview Available !

IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
320
85
160
Single
0.12
D
Super-247
G
S
D
G
ORDERING INFORMATION
Package
S
N-Channel MOSFET
Lead (Pb)-free
SnPb
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simple Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uniterruptible Power Supplies
• Motor Control applications
Super-247
IRFPS38N60LPbF
SiHFPS38N60L-E3
IRFPS38N60L
SiHFPS38N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting TJ = 25 °C, L = 0.91 mH, Rg = 25 , IAS = 38 A, dV/dt = 13 V/ns (see fig. 14a).
c. ISD 38 A, dI/dt 630 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
LIMIT
600
± 30
38
24
150
4.3
680
38
54
540
19
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHFPS38N60L Datasheet

Power MOSFET

No Preview Available !

IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.22
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 23 Ab
VDS = 50 V, ID = 23 Ab
600 -
-V
- 410 - mV/°C
3.0 - 5.0 V
- - ± 100 nA
- - 50 μA
- - 2.0 mA
-
0.12 0.15
20 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 0 V to 480 Vc
- 7990 -
- 740 -
- 72 -
- 350 -
- 260 -
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
VGS = 10 V
ID = 38 A, VDS = 480 V
see fig. 7 and 15b
-
-
-
- 320
- 85 nC
- 160
f = 1 MHz, open drain
VDD = 300 V, ID = 38 A,
RG = 4.3 , VGS = 10 V,
see fig. 11a and 11bb
- 1.2 -
- 44 -
- 130 -
ns
- 92 -
- 69 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 38
A
- - 150
Body Diode Voltage
VSD
TJ = 25 °C, IS = 38 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 38 A
TJ = 125 °C, dI/dt = 100 A/μsb
- 170 250
ns
- 420 630
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 38 A, VGS = 0 Vb
TJ = 125 °C, dI/dt = 100 A/μsb
- 830 1240
nC
- 2600 3900
Reverse Recovery Time
IRRM
TJ = 25 °C
-
9.1 14
A
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 % to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11


Part Number SiHFPS38N60L
Description Power MOSFET
Maker Vishay
Total Page 9 Pages
PDF Download

SiHFPS38N60L Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SiHFPS38N60L Power MOSFET
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy