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SiHFZ14L Datasheet Power MOSFET

Manufacturer: Vishay

Overview: .vishay. IRFZ14S, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) S GD D G S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications.

The D2PAK (TO-263) is a surface-mount power package capable of acmodating die sizes up to HEX-4.

Key Features

  • Advanced process technology.
  • Surface-mount (IRFZ14S, SiHFZ14S).
  • Low profile through-hole (SiHFZ14L).
  • 175 °C operating temperature Available.
  • Fast switching Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations a.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Vishay Siliconix Logo SIHFZ14 Power MOSFET Vishay Siliconix

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