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SiHFZ46-E3 - Power MOSFET

Download the SiHFZ46-E3 datasheet PDF. This datasheet also covers the SiHFZ46 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt Rating 50 0.024.
  • 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFZ46-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
SIHFZ44 Power MOSFET Vishay Siliconix
SIHFZ44L Power MOSFET Vishay Siliconix
SIHFZ48 Power MOSFET Vishay Siliconix
SIHFZ48L Power MOSFET Vishay Siliconix
SIHFZ48S Power MOSFET Vishay Siliconix

Other Datasheets by Vishay

Part Number Description
SiHFZ46 Power MOSFET
SIHFZ40 Power MOSFET
SiHFZ44S Power MOSFET
SIHFZ48 Power MOSFET
SiHFZ14L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFZ46, SiHFZ46 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 66 21 25 Single D FEATURES • Dynamic dV/dt Rating 50 0.024 • • • • • 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.