SiHG190N65E
SiHG190N65E is Power MOSFET manufactured by Vishay.
FEATURES
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Server and tele power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
TO-247AC Si HG190N65E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dv/dt c
EAS PD TJ, Tstg dv/dt
Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 m H, Rg = 25 , IAS = 1.8 A c. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
LIMIT 650 ± 30 20 12 38 1.4 46 179
-55 to +150 100 10
UNIT...
