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Vishay Intertechnology Electronic Components Datasheet

SiHG21N60EF Datasheet

Power MOSFET

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www.vishay.com
SiHG21N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
84
14
24
Single
TO-247AC
0.176
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Increased robustness due to low Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power suppliers (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-247AC
SiHG21N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 900 A/μs, starting TJ = 25 °C.
LIMIT
600
± 30
21
14
53
1.8
367
227
-55 to +150
70
50
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S17-0299-Rev. B, 27-Feb-17
1
Document Number: 91594
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHG21N60EF Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthJC
TYP.
-
-
SiHG21N60EF
Vishay Siliconix
MAX.
62
0.55
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 480 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 11 A
VDS = 30 V, ID = 11 A
600
-
2.0
-
-
-
-
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance, energy
related a
Effective output capacitance, time
related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VGS = 0 V, VDS = 0 V to 480 V
-
-
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 11 A, VDS = 480 V
VDD = 480 V, ID = 11 A
Rg = 9.1 , VGS = 10 V
f = 1 MHz, open drain
-
-
-
-
-
-
-
0.2
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current
integral reverse
ISM p - n junction diode
D
G
S
-
-
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 11 A, VGS = 0 V
-
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 11 A,
dI/dt = 100 A/μs, VR = 400 V
-
-
-
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS.
TYP. MAX. UNIT
-
0.59
-
-
-
-
-
0.153
7
-
-
4.0
± 100
±1
1
500
0.176
-
V
V/°C
V
nA
μA
μA
S
2030
105
5
86
299
56
14
24
21
31
59
27
0.56
-
-
-
-
-
84
-
-
42
62
89
54
1.2
pF
nC
ns
- 21
-
0.9
135
0.76
11
53
1.2
270
1.52
-
A
V
ns
μC
A
S17-0299-Rev. B, 27-Feb-17
2
Document Number: 91594
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHG21N60EF
Description Power MOSFET
Maker Vishay
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