SiHG21N60EF
FEATURES
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Increased robustness due to low Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Telemunications
- Server and tele power supplies
- Lighting
- High intensity discharge (HID)
- Light emitting diodes (LEDs)
- Consumer and puting
- ATX power supplies
- Industrial
- Welding
- Battery chargers
- Renewable energy
- Solar (PV inverters)
- Switch mode power suppliers (SMPS)
- Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
TO-247AC Si HG21N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ...
