* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM): Ron x Qg
* Low input capacitance (Ciss)
* Increased robustness due to low Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated (UI
SiHG21N60EF Datasheet (193.00 KB)
SiHG21N60EF
193.00 KB
Power mosfet.
www.vishay.com SiHG21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (.
📁 Related Datasheet
SiHG21N65EF Power MOSFET (Vishay)
SiHG21N80AEF Power MOSFET (Vishay)
SIHG20N50C Power MOSFET (Vishay Siliconix)
SIHG20N50C N-Channel MOSFET (INCHANGE)
SiHG20N50E Power MOSFET (Vishay)
SIHG22N60AE MOSFET (Vishay)
SIHG22N60E Power MOSFET (Vishay Siliconix)
SIHG22N60S-E3 (SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET (Vishay Siliconix)
SIHG24N65E Power MOSFET (Vishay Siliconix)
SIHG24N65EF Power MOSFET (Vishay)
