SiHG47N60AE Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance
- Part: SiHG47N60AE
- Manufacturer: Vishay (official site)
- Size: 141.34 KB
Other SiHG47N60AE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
SIHG47N60AEF | N-Channel MOSFET |
Vishay |
SIHG47N60E | Power MOSFET |
|
Vishay |
SIHG47N60S-E3 | (SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET |
SiHG47N60AE Description
SiHG47N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 182 29 62 Single 0.056 TO-247AC D S D G G S N-Channel MOSFET.