SiHH068N60E Overview
SiHH068N60E Vishay Siliconix E Series Power MOSFET PowerPAK® 8 x 8 4 1 2 3 3 Pin 4: source N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 80 17 20 Single 0.059.
SiHH068N60E Key Features
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Kelvin connection for reduced gate noise
- Material categorization: for definitions of pliance please see .vishay./doc?99912