* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
* Material categorization: for definitions of compliance please see www.vishay.com
SiHJ6N65E Datasheet (213.69 KB)
SiHJ6N65E
213.69 KB
E series power mosfet.
www.vishay.com SiHJ6N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC).
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