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SiHL640 Datasheet Power MOSFET

Manufacturer: Vishay

Overview: Power MOSFET IRL640, SiHL640 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 5.0 V 66 9.0 38 Single 0.

General Description

Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Key Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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