SiHLIZ34G
Description
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available
- Sink to Lead Creepage Distance 4.8 mm
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- Fast Switching
- Ease of paralleling
- Lead (Pb)-free
