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SiHP18N50C - Power MOSFET

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Overview

www.vishay.com SiHP18N50C Vishay Siliconix Power MOSFET TO-220AB D S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max.

RDS(on) () Qg max.

(nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 76 21 29 Single 0.

Key Features

  • Low figure-of-merit Ron x Qg.
  • 100 % avalanche tested Available.
  • High peak current capability.
  • dv/dt ruggedness Available.
  • Improved trr/Qrr.
  • Improved gate charge.
  • High power dissipations capability.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. F.

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