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Vishay Intertechnology Electronic Components Datasheet

SiHP18N50C Datasheet

Power MOSFET

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www.vishay.com
SiHP18N50C
Vishay Siliconix
Power MOSFET
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
560
VGS = 10 V
76
21
29
Single
0.225
FEATURES
• Low figure-of-merit Ron x Qg
• 100 % avalanche tested
Available
• High peak current capability
• dv/dt ruggedness
Available
• Improved trr/Qrr
• Improved gate charge
• High power dissipations capability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-220AB
SiHP18N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
VDS
VGS
Continuous drain current (TJ = 150 °C) a
Pulsed drain current b
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear derating factor
Single pulse avalanche energy c
Maximum power dissipation
Reverse diode dv/dt d
EAS
PD
dv/dt
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Notes
a. Drain current limited by maximum junction temperature
b. Repetitive rating; pulse width limited by maximum junction temperature
c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 17 A
d. ISD 18 A, di/dt 380 A/μs, VDD VDS, TJ 150 °C
e. 1.6 mm from case
LIMIT
500
± 30
18
11
72
1.8
361
223
5
-55 to +150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-case (drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.56
UNIT
°C/W
S17-1726-Rev. E, 20-Nov-17
1
Document Number: 91374
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHP18N50C Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
SiHP18N50C
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage (N)
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance a
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 10 A
VDS = 50 V, ID = 10 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate input resistance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V,
VDS = 25 V,
f = 1 MHz
VGS = 10 V ID = 18 A, VDS = 400 V
VDD = 250 V, ID = 18 A,
VGS = 10 V, Rg = 7.5
f = 1 MHz, open drain
Continuous source-drain diode current
Pulsed diode forward current
IS
MOSFET symbol
showing the
D
integral reverse
G
ISM p - n junction diode
S
MIN.
500
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX.
-
0.6
-
-
-
-
0.225
6.4
-
-
5.0
± 100
25
250
0.270
-
2451
300
26
65
21
29
80
27
32
44
1.1
2942
360
32
76
-
-
-
-
-
-
-
- 18
- 72
UNIT
V
V/°C
V
nA
μA
S
pF
nC
ns
A
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 18 A, VGS = 0 V
TJ = 25 °C, IF = IS,
di/dt = 100 A/μs, VR = 35 V
- - 1.5 V
- 503 -
ns
- 6.7 - μC
- 30 -
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
S17-1726-Rev. E, 20-Nov-17
2
Document Number: 91374
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHP18N50C
Description Power MOSFET
Maker Vishay
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