SiHP18N50C Description
SiHP18N50C Vishay Siliconix Power MOSFET TO-220AB D S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 76 21 29 Single 0.225.
SiHP18N50C Key Features
- Low figure-of-merit Ron x Qg
- 100 % avalanche tested
- High peak current capability
- dv/dt ruggedness
- Improved trr/Qrr
- Improved gate charge
- High power dissipations capability
- Material categorization: for definitions of pliance please see .vishay./doc?99912
- This datasheet provides information about parts that are