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SiHU2N80E Datasheet Power MOSFET

Manufacturer: Vishay

Overview: www.vishay.com SiHU2N80E Vishay Siliconix E Series Power MOSFET IPAK (TO-251) D D G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 90 11 19 Single 2.

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Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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