Title | N채널 800V 2.8A(Tc) 62.5W(Tc) 스루홀 TO-251AA |
Description | www.vishay.com SiHU2N80E Vishay Siliconix E Series Power MOSFET IPAK (TO-251) D D G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 90 11 19 Single 2.38 FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate cha... |
Features |
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • ... |
Datasheet |
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3000 units: 904.8483 KRW
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