Datasheet4U Logo Datasheet4U.com

SiHU4N80AE - Power MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low effective capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SiHA11N80E N-Channel MOSFET INCHANGE
SIHB12N50C Power MOSFET Vishay Siliconix
SIHB16N50C Power MOSFET Vishay Siliconix
SiHB22N60E E Series Power MOSFET Vishay Siliconix
SiHB22N60E N-Channel MOSFET INCHANGE

Other Datasheets by Vishay

Part Number Description
SiHU4N80E Power MOSFET
SiHU2N80E Power MOSFET
SiHU5N50D Power MOSFET
SiHU5N80AE Power MOSFET
SiHU6N62E Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com SiHU4N80AE Vishay Siliconix E Series Power MOSFET IPAK (TO-251) D GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 16.5 3 5 Single 1.25 FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.