SiRA20DP - N-Channel MOSFET

Features

TrenchFET® Gen IV power MOSFET.
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiRA20DP
Manufacturer	Vishay
File Size	411.69 KB
Description	N-Channel MOSFET
Datasheet	SiRA20DP Datasheet

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Full PDF Text Transcription

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www.vishay.com SiRA20DP Vishay Siliconix N-Channel 25 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 25 0.00058 0.00082 61 100 a, g Single FEATURES • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Jul 20, 2019 |